Technologies

Technologies developed during Lou Hutter's career are listed below.

Analog CMOS Technologies

  • 1982 – LinCMOS (5um) – 1st silicon-gate CMOS technology in production at TI
  • 1997 – A21 (20V, 0.7um)
  • 1999 – A12 (20V, 0.5um)
  • 2001 – A07 (20V, 0.3um)
  • 2002 – A07S (40V, 0.25um) – simplified and 90% shrink version of A07S
  • 2003 – HPA07 (5V, 0.3um) – leadership high-performance process in the industry
  • 2006 – A035 (20V, 0.13um)
  • 2006 – HPA07HV (36V, 0.3um) – addressed industrial markets
  • 2010 – AN180 (24V, 0.18um) – the hub of a 5-process 0.18um technology platform
  • 2011 – HP180 (24V, 0.18um) – extremely low-noise, high-precision version of AN180

Power BCD Technologies

  • 1988 – LBC1 (20V, 3um)
  • 1991 – LBC2 (20V, 2um)
  • 1992 – Lateral DMOS power transistor extension
  • 1994 – LBC3 (50V, 1um)
  • 1996 – LBC3S (50V, 1um) – simplified version of LBC3
  • 1998 – LBC4 (60V, 0.7um)
  • 2002 – LBC5 (60V, 0.35um)
  • 2003 – LBCSOI (100V, 0.7um)
  • 2002 – LBC6 (20V, 0.5um)
  • 2005 – LBC7 (30V, 0.25um)
  • 2007 – LBC8 (60V, 0.18um) – defined & partially developed when I retired from TI
  • 2010 – BD180LV (30V,0.18um) – two versions (epi and non-epi), based on AN180
  • 2011 – BD180X (60V, 0.18um) – optimized 2nd generation 60V process based on AN180

High-Speed Biploar and BiCMOS Technologies

  • 1997 – BiCom1 (1.0um) – 36V ox-isolated complementary bipolar (Ft ~2 GHz)
  • 1998 – RFBiCMOS1 (0.5um) – 3V NPN BiCMOS (Ft~21 GHz)
  • 2000 – RFBiCMOS2 (0.5um) – 3V NPN BiCMOS (Ft~25 GHz)
  • 2001 – RFSiGe (0.35um) – 3V SiGe NPN BiCMOS (Ft~45 GHz)
  • 2002 – BiCom2 (0.7um) – 15V ox-isolated complementary BiCMOS (Ft ~6 GHz)
  • 2003 – BiCom3 (0.35um) – 5V ox-isolated complementary SiGe BiCMOS (Ft~18 GHz)
  • 2004 – BiCom3X (0.35um) – 5V ox-isolated complementary SiGe BiCMOS (Ft~25 GHz)
  • 2007 – BiCom3HV (0.35um) – 36V ox-isolated complementary SiGe bipolar (Ft~4 GHz)
  • 2007 – BiCom3XL (0.35um) – 5V bulk complementary SiGe BiCMOS (Ft~23 GHz)

Thick Copper Technologies

  • 1995 – 15um thick copper power metal with bond over active circuit (BOAC) strategy
  • 2000 – 10um thick copper power metal with BOAC
  • 2003 – 6um thick copper power metal with BOAC



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